SI4286DY Datasheet, PDF (1/10 Pages) Vishay Siliconix – Dual N-Channel 40 V (D-S) MOSFET

Dual N-Channel 40 V (D-S) MOSFET
Si4286DY
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
R_DS(on) ()
40
0.0325 at V_GS = 10 V
0.040 at V_GS = 4.5 V
I_D (A)^a
7
6.3
Q_g (Typ.)
3.3 nC
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET^® Gen III Power MOSFET
• 100 % R_g Tested
• 100 % UIS Tested
• Compliant to RoHS Directive 2002/95/EC
S₁ 1
G₁ 2
S₂ 3
G_{2 4}
SO-8
8 D1
7 ^D1
6 D2
5 ^D2
APPLICATIONS
• DC/DC Converter
- External HDD
- Notebook System Power D₁
D₂
• LCD Display Backlighting
G₁
G₂
Top View
Ordering Information: Si4286DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
S₁
S₂
N-Channel MOSFET N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
V_DS
40
V
V_GS
± 20
T_C = 25 °C
7
Continuous Drain Current (T_J = 150 °C)
T_C = 70 °C
T_A = 25 °C
I_D
5.6
5.7^{b, c}
T_A = 70 °C
4.6^{b, c}
A
Pulsed Drain Current (t = 300 µs)
I_DM
20
Continuous Source-Drain Diode Current
T_C = 25 °C
T_A = 25 °C
I_S
2.4
1.6^{b, c}
Single Pulse Avalanche Current
L = 0.1 mH
I_AS
8
Single Pulse Avalanche Energy
E_AS
3.2
mJ
T_C = 25 °C
2.9
Maximum Power Dissipation
T_C = 70 °C
T_A = 25 °C
P_D
1.86
1.9^{b, c}
W
T_A = 70 °C
1.23^{b, c}
Operating Junction and Storage Temperature Range
T_J, T_stg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^{b, d}
t  10 s
Maximum Junction-to-Foot (Drain)
Steady State
Notes:
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under steady state conditions is 120 °C/W.
Symbol
R_thJA
R_thJF
Typical
55
35
Maximum
65
43
Unit
°C/W
Document Number: 67599
www.vishay.com
S11-1151-Rev. A, 13-Jun-11
1
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000