SI4276DY Datasheet, PDF (1/15 Pages) Vishay Siliconix – Dual N-Channel 30 V (D-S) MOSFET

Dual N-Channel 30 V (D-S) MOSFET
Si4276DY
Vishay Siliconix
PRODUCT SUMMARY
Channel 1
Channel 2
V_DS (V)
30
30
R_DS(on) (Ω)
0.0153 at V_GS = 10 V
0.0184 at V_GS = 4.5 V
0.0280 at V_GS = 10 V
0.0340 at V_GS = 4.5 V
I_D (A)^a Q_g (Typ.)
8^e
8^e
8.4
8
3.6
7.1
S_{1 1}
G_{1 2}
S_{2 3}
G_{2 4}
SO-8
8 ^D1
7 ^D1
6 ^D2
5 ^D2
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET^® Power MOSFET
• 100 % R_g Tested
• 100 % UIS Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• DC/DC for Notebook PC
D₁
D₂
G₁
G₂
Top View
Ordering Information: Si4276DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150 °C)
Pulsed Drain Current (10 µs Pulse Width)
Source-Drain Current Diode Current
Single Pulse Avalanche Current
Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
T_C = 25 °C
T_C = 70 °C
T_A = 25 °C
T_A = 70 °C
T_C = 25 °C
T_A = 25 °C
L = 0.1 mH
T_C = 25 °C
T_C = 70 °C
T_A = 25 °C
T_A = 70 °C
V_DS
V_GS
I_D
I_DM
I_S
I_AS
E_AS
P_D
T_J, T_stg
S₁
S₂
N-Channel MOSFET N-Channel MOSFET
Channel 1
Channel 2
30
8^e
8^e
8^{b, c, e}
7.6^{b, c}
± 20
8
6.4
6.8^{b, c}
5.5^{b, c}
50
30
3.0
1.7^{b, c}
2.3
1.7^{b, c}
20
10
20
5
3.6
2.8
2.3
2.1^{b, c}
1.3^{b, c}
1.8
2.0^{b, c}
1.3^{b, c}
- 55 to 150
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Channel 1
Parameter
Maximum Junction-to-Ambient^{b, d}
Maximum Junction-to-Foot (Drain)
t ≤ 10 s
Steady
Symbol
R_thJA
R_thJF
Typical
47
30
Maximum
60
35
Notes:
a. Based on T_C = 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under steady state conditions is 107 °C/W (Ch 1) and 110 °C/W (Ch 2).
e. Package limited.
Channel 2
Typical Maximum
58
62.5
38
45
Unit
°C/W
Document Number: 66599
S10-1289-Rev. A, 31-May-10
www.vishay.com
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