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SI4276DY-T1-E3 Datasheet, PDF (1/14 Pages) Vishay Siliconix – Dual N-Channel 30 V (D-S) MOSFET
Si4276DY-T1-E3
Vishay Siliconix
Dual N-Channel 30 V (D-S) MOSFET
PRODUCT SUMMARY
Channel 1
Channel 2
VDS (V)
30
30
RDS(on) ()
0.0153 at VGS = 10 V
0.0184 at VGS = 4.5 V
0.0280 at VGS = 10 V
0.0340 at VGS = 4.5 V
ID (A)a Qg (Typ.)
8e
8e
8.4
8
3.6
7.1
FEATURES
• TrenchFET® Power MOSFET
• 100 % Rg Tested
• 100 % UIS Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• DC/DC for Notebook PC
S1 1
G1 2
S2 3
G2 4
SO-8
8 D1
7 D1
6 D2
5 D2
D1
D2
G1
G2
Top View
Ordering Information: Si4276DY-T1-E3 (Lead (Pb)-free)
S1
S2
N-Channel MOSFET N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Channel 1
Channel 2
Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current (10 µs Pulse Width)
Source-Drain Current Diode Current
Single Pulse Avalanche Current
Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
VDS
VGS
TC = 25 °C
TC = 70 °C
TA = 25 °C
ID
TA = 70 °C
IDM
30
V
± 20
8e
8
8e
6.4
8b, c, e
6.8b, c
7.6b, c
50
5.5b, c
A
30
TC = 25 °C
TA = 25 °C
IS
3.0
1.7b, c
2.3
1.7b, c
L = 0.1 mH
IAS
20
EAS
20
10
5
mJ
TC = 25 °C
3.6
2.8
TC = 70 °C
TA = 25 °C
PD
TA = 70 °C
2.3
2.1b, c
1.3b, c
1.8
2.0b, c
W
1.3b, c
TJ, Tstg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Channel 1
Parameter
Maximum Junction-to-Ambientb, d
Maximum Junction-to-Foot (Drain)
t 10 s
Steady
Symbol
RthJA
RthJF
Typical
47
30
Maximum
60
35
Notes:
a. Based on TC = 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under steady state conditions is 107 °C/W (Ch 1) and 110 °C/W (Ch 2).
e. Package limited.
Channel 2
Typical Maximum
58
62.5
38
45
Unit
°C/W
Document Number: 67909
www.vishay.com
S11-0653-Rev. A, 11-Apr-11
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000