SI426DQ Datasheet, PDF (1/4 Pages) Vishay Siliconix – N-Channel 2.5-V (G-S) Rated MOSFET

N-Channel 2.5-V (G-S) Rated MOSFET
Si6426DQ
Product Summary
V_DS (V)
20
r_DS(on) (W)
0.035 @ V_GS = 4.5 V
0.04 @ V_GS = 2.5 V
I_D (A)
"5.4
"4.9
D
TSSOP-8
D1_D
S2
S3
Si6426DQ
G4
Top View
8D
7S
6S
5D
G
S*
N-Channel MOSFET
*Source Pins 2, 3, 6, and 7
must be tied common.
Absolute Maximum Ratings (T_A = 25_C Unless Otherwise Noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150_C)^a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)^a
Maximum Power Dissipation^a
Operating Junction and Storage Temperature Range
T_A = 25_C
T_A = 70_C
T_A = 25_C
T_A = 70_C
V_DS
V_GS
I_D
I_DM
I_S
P_D
T_J, T_stg
20
V
"8
"5.4
"4.2
A
"30
1.25
1.5
W
1.0
–55 to 150
_C
Thermal Resistance Ratings
Parameter
Symbol
Limit
Unit
Maximum Junction-to-Ambient^a
R_thJA
83
_C/W
Notes
a. Surface Mounted on FR4 Board, t v 10 sec.
Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70174.
A SPICE Model data sheet is available for this product (FaxBack document #70545).
Siliconix
1
S-49534—Rev. A, 06-Oct-97