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| SI4230DY-T1-GE3 Datasheet, PDF (1/10 Pages) Vishay Siliconix – Dual N-Channel 30-V (D-S) MOSFET | |||
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Dual N-Channel 30-V (D-S) MOSFET
Si4230DY
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.0205 at VGS = 10 V
30
0.026 at VGS = 4.5 V
ID (A)a, e
8
8
Qg (Typ.)
7.3
FEATURES
⢠Halogen-free
⢠TrenchFET® Power MOSFET
⢠100 % Rg and UIS Tested
APPLICATIONS
⢠Low Current DC/DC
⢠Notebook PC
- System Power
D1
D2
S1 1
G1 2
S2 3
G2 4
SO-8
8 D1
7 D1
6 D2
5 D2
G1
G2
Top View
Ordering Information: Si4230DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
S1
N-Channel MOSFET
S2
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
VDS
30
V
VGS
± 20
TC = 25 °C
8e
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C
TA = 25 °C
ID
7.5
7.3b, c
TA = 70 °C
5.8b, c
Pulsed Drain Current (10 µs Pulse Width)
IDM
30
A
Source-Drain Current Diode Current
TC = 25 °C
TA = 25 °C
IS
2.6
1.7b, c
Pulsed Source-Drain Current
ISM
30
Single Pulse Avalanche Current
L = 0.1 mH
IAS
10
Single Pulse Avalanche Energy
EAS
5
mJ
TC = 25 °C
3.2
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
PD
2.1
2b, c
W
TA = 70 °C
1.28b, c
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, d
t ⤠10 s
Maximum Junction-to-Foot (Drain)
Steady State
Notes:
a. Based on TC = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 110 °C/W.
e. Package limited.
Symbol
RthJA
RthJF
Document Number: 68983
S-82660-Rev. A, 03-Nov-08
Typical
50
30
Maximum
62.5
38
Unit
°C/W
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