SI4228DY Datasheet, PDF (1/10 Pages) Vishay Siliconix – Dual N-Channel 25 V (D-S) MOSFET

New Product
Dual N-Channel 25 V (D-S) MOSFET
Si4228DY
Vishay Siliconix
#
PRODUCT SUMMARY
V_DS (V)
25
R_DS(on) (Ω)
0.018 at V_GS = 10 V
0.020 at V_GS = 4.5 V
0.024 at V_GS = 2.5 V
I_D (A)^{a, e}
8
8
7.5
Q_g (Typ.)
7.8 nC
S_{1 1}
G_{1 2}
S_{2 3}
G_{2 4}
SO-8
Top View
8 ^D1
7 ^D1
6 ^D2
5 ^D2
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET^® Power MOSFET
• 100 % R_g and UIS Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Synchronous Buck Converter
• DC/DC Converter
D₁
D₂
G₁
G₂
Ordering Information: Si4228DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
T_C = 25 °C
Continuous Drain Current (T_J = 150 °C)
T_C = 70 °C
T_A = 25 °C
I_D
T_A = 70 °C
Pulsed Drain Current
I_DM
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current
Avalanche Energy
T_C = 25 °C
T_A = 25 °C
I_S
L = 0.1 mH
I_AS
E_AS
T_C = 25 °C
Maximum Power Dissipation
T_C = 70 °C
T_A = 25 °C
P_D
T_A = 70 °C
Operating Junction and Storage Temperature Range
T_J, T_stg
S₁
N-Channel MOSFET
Limit
25
± 12
8^e
8^e
8^{b, c, e}
6.9^{b, c}
50
2.6
1.7^{b, c}
15
11.25
3.1
2
2^{b, c}
1.3^{b, c}
- 55 to 150
S₂
N-Channel MOSFET
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^{b, d}
t ≤ 10 s
Maximum Junction-to-Foot (Drain)
Steady State
Notes:
a. Based on T_C = 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under steady state conditions is 110 °C/W.
e. Package limited.
Document Number: 66591
S10-1043-Rev. A, 03-May-10
Symbol
R_thJA
R_thJF
Typical
52
30
Maximum
62.5
40
Unit
°C/W
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