SI4228DY-T1-E3 Datasheet, PDF (1/9 Pages) Vishay Siliconix – Dual N-Channel 25 V (D-S) MOSFET

Si4228DY-T1-E3
Vishay Siliconix
Dual N-Channel 25 V (D-S) MOSFET
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PRODUCT SUMMARY
V_DS (V)
25
R_DS(on) ()
0.018 at V_GS = 10 V
0.020 at V_GS = 4.5 V
0.024 at V_GS = 2.5 V
I_D (A)^{a, e}
8
8
7.5
Q_g (Typ.)
7.8 nC
S_{1 1}
G_{1 2}
S_{2 3}
G_{2 4}
SO-8
Top View
8 ^D1
7 ^D1
6 ^D2
5 ^D2
FEATURES
• TrenchFET^® Power MOSFET
• 100 % R_g and UIS Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Synchronous Buck Converter
• DC/DC Converter
D₁
D₂
G₁
G₂
Ordering Information: Si4228DY-T1-E3 (Lead (Pb)-free)
S₁
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Drain-Source Voltage
V_DS
25
Gate-Source Voltage
Continuous Drain Current (T_J = 150 °C)
V_GS
T_C = 25 °C
T_C = 70 °C
T_A = 25 °C
I_D
T_A = 70 °C
± 12
8^e
8^e
8^{b, c, e}
6.9^{b, c}
Pulsed Drain Current
I_DM
50
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current
Avalanche Energy
T_C = 25 °C
T_A = 25 °C
I_S
L = 0.1 mH
I_AS
E_AS
2.6
1.7^{b, c}
15
11.25
T_C = 25 °C
3.1
Maximum Power Dissipation
T_C = 70 °C
T_A = 25 °C
P_D
T_A = 70 °C
2
2^{b, c}
1.3^{b, c}
Operating Junction and Storage Temperature Range
T_J, T_stg
- 55 to 150
S₂
N-Channel MOSFET
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^{b, d}
t  10 s
Maximum Junction-to-Foot (Drain)
Steady State
Notes:
a. Based on T_C = 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under steady state conditions is 110 °C/W.
e. Package limited.
Symbol
R_thJA
R_thJF
Typical
52
30
Maximum
62.5
40
Unit
°C/W
Document Number: 67908
www.vishay.com
S11-0653-Rev. A, 11-Apr-11
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000