SI4226DY Datasheet, PDF (1/7 Pages) Vishay Siliconix – Dual N-Channel 25-V (D-S) MOSFET

New Product
Dual N-Channel 25-V (D-S) MOSFET
Si4226DY
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
0.0195 at V_GS = 4.5 V
25
0.026 at V_GS = 2.5 V
I_D (A)^{a, e}
8
8
Q_g (Typ.)
11
FEATURES
• Halogen-free According to IEC 61249-2-21
Available
• TrenchFET^® Power MOSFET
• 100 % R_g and UIS Tested
APPLICATIONS
• Synchronous Buck Converter
D₁
D₂
S_{1 1}
G_{1 2}
S_{2 3}
G_{2 4}
SO-8
8 ^D1
7 ^D1
6 ^D2
5 ^D2
G₁
G₂
Top View
Ordering Information: Si4226DY-T1-E3 (Lead (Pb)-free)
Si4226DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
S₁
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
T_C = 25 °C
Continuous Drain Current (T_J = 150 °C)
T_C = 70 °C
T_A = 25 °C
I_D
T_A = 70 °C
Pulsed Drain Current (10 µs Pulse Width)
I_DM
Source-Drain Current Diode Current
T_C = 25 °C
T_A = 25 °C
I_S
Pulsed Source-Drain Current
I_SM
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
L = 0.1 mH
I_AS
E_AS
T_C = 25 °C
Maximum Power Dissipation
T_C = 70 °C
T_A = 25 °C
P_D
T_A = 70 °C
Operating Junction and Storage Temperature Range
T_J, T_stg
Limit
25
± 12
8^e
7.7
7.5^{b, c}
6^{b, c}
30
2.6
1.7^{b, c}
30
10
5
3.2
2.1
2^{b, c}
1.28^{b, c}
- 55 to 150
S₂
N-Channel MOSFET
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^{b, d}
Maximum Junction-to-Foot (Drain)
t ≤ 10 s
Steady State
Notes:
a. Based on T_C = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 110 °C/W.
e. Package limited.
Symbol
R_thJA
R_thJF
Document Number: 69980
S09-0392-Rev. B, 09-Mar-09
Typical
50
30
Maximum
62.5
38
Unit
°C/W
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