SI4214DDY-T1-E3 Datasheet, PDF (1/9 Pages) Vishay Siliconix – Dual N-Channel 30 V (D-S) MOSFET

Si4214DDY-T1-E3
Vishay Siliconix
Dual N-Channel 30 V (D-S) MOSFET
PRODUCT SUMMARY
V_DS (V)
R_DS(on) ()
0.0195 at V_GS = 10 V
30
0.023 at V_GS = 4.5 V
I_D (A)^a
8.5
8.6
Q_g (Typ.)
7.1
FEATURES
• TrenchFET^Power MOSFET
• 100 % R_g Tested
• 100 % UIS Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Notebook System Power
• Low Current DC/DC
S_{1 1}
G_{1 2}
S_{2 3}
G_{2 4}
SO-8
8 ^D1
7 ^D1
6 ^D2
5 ^D2
D₁
D₂
G₁
G₂
Top View
Ordering Information: Si4214DDY-T1-E3 (Lead (Pb)-free)
S₁
N-Channel MOSFET
S₂
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
V_DS
30
V
V_GS
± 20
T_C = 25 °C
8.5
Continuous Drain Current (T_J = 150 °C)
T_C = 70 °C
T_A = 25 °C
I_D
7.5
7.5^{b, c}
T_A = 70 °C
5.9^{b, c}
Pulsed Drain Current
Source-Drain Current Diode Current
I_DM
30
A
T_C = 25 °C
T_A = 25 °C
I_S
2.8
1.8^{b, c}
Pulsed Source-Drain Current
I_SM
30
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
L = 0.1 mH
I_AS
10
E_AS
5
T_C = 25 °C
3.1
Maximum Power Dissipation
T_C = 70 °C
T_A = 25 °C
P_D
2.0
W
2.0^{b, c}
T_A = 70 °C
1.25^{b, c}
Operating Junction and Storage Temperature Range
T_J, T_stg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^{b, d}
Maximum Junction-to-Foot (Drain)
t  10 s
Steady-State
Notes:
a. Based on T_C = 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under steady state conditions is 110 °C/W.
Symbol
R_thJA
R_thJF
Typ.
52
30
Max.
62.5
40
Unit
°C/W
Document Number: 67907
www.vishay.com
S11-0653-Rev. A, 11-Apr-11
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000