SI4202DY Datasheet, PDF (1/10 Pages) Vishay Siliconix – Dual N-Channel 30 V (D-S) MOSFET

Dual N-Channel 30 V (D-S) MOSFET
Si4202DY
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
R_DS(on) ()
0.014 at V_GS = 10 V
30
0.017 at V_GS = 4.5 V
I_D (A)
12.1
11
Q_g (Typ.)
5.4 nC
S_{1 1}
G_{1 2}
S_{2 3}
G_{2 4}
SO-8
8 ^D1
7 ^D1
6 ^D2
5 ^D2
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET^® Power MOSFET
• 100 % R_g Tested
• 100 % UIS Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Synchronous Buck
- Notebooks
D₁
D₂
- Servers
- STB
G₁
G₂
Top View
Ordering Information: Si4202DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
S₁
S₂
N-Channel MOSFET N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
T_C = 25 °C
V_DS
V_GS
Continuous Drain Current (T_J = 150 °C)
T_C = 70 °C
T_A = 25 °C
I_D
T_A = 70 °C
Pulsed Drain Current
Continuous Source Drain Diode Current
I_DM
T_C = 25 °C
T_A = 25 °C
I_S
Avalanche Current
Single-Pulse Avalanche Energy
L = 0 1 mH
I_AS
E_AS
Maximum Power Dissipation
T_C = 25 °C
T_C = 70 °C
T_A = 25 °C
P_D
T_A = 70 °C
Operating Junction and Storage Temperature Range
T_J, T_stg
Limit
30
± 20
12.1
11
9.7^{a, b}
8.2^{a, b}
50
3.1
2^{a, b}
15
11.25
3.7
2.6
2.4^{a, b}
1.7^{a, b}
- 55 to 150
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^{a, c}
t  10 s
Maximum Junction-to-Foot (Drain)
Steady State
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. Maximum under steady state conditions is 110 °C/W.
Symbol
R_thJA
R_thJF
Typical
50
33
Maximum
62.5
41
Unit
V
A
mJ
W
°C
Unit
°C/W
Document Number: 67092
S10-2602-Rev. A, 15-Nov-10
www.vishay.com
1