SI4200DY Datasheet, PDF (1/10 Pages) Vishay Siliconix – Dual N-Channel 25 V (D-S) MOSFET

Dual N-Channel 25 V (D-S) MOSFET
Si4200DY
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
25
R_DS(on) (Ω)
0.025 at V_GS = 10 V
0.030 at V_GS = 4.5 V
I_D (A)
8^a
7.9
Q_g (Typ.)
3.6 nC
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET^® Gen III Power MOSFET
• Compliant to RoHS Directive 2002/95/EC
SO-8
APPLICATIONS
• DC/DC Converter
- Game Console
- Notebook System Power
S₁ 1
G₁ 2
S₂ 3
G_{2 4}
8 D1
7 ^D1
6 D2
5 ^D2
D₁
D₂
G₁
G₂
Top View
Ordering Information: Si4200DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
S₁
N-Channel MOSFET
S₂
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
V_DS
25
V
V_GS
± 16
T_C = 25 °C
8^a
Continuous Drain Current (T_J = 150 °C)
T_C = 70 °C
T_A = 25 °C
I_D
6.9
7.3^{b, c}
T_A = 70 °C
5.8^{b, c}
A
Pulsed Drain Current (t = 300 µs)
I_DM
30
Continuous Source-Drain Diode Current
T_C = 25 °C
T_A = 25 °C
I_S
2.3
1.7^{b, c}
Single Pulse Avalanche Current
L = 0.1 mH
I_AS
12
Single Pulse Avalanche Energy
E_AS
7.2
mJ
T_C = 25 °C
2.8
Maximum Power Dissipation
T_C = 70 °C
T_A = 25 °C
P_D
1.8
2.0^{b, c}
W
T_A = 70 °C
1.3^{b, c}
Operating Junction and Storage Temperature Range
T_J, T_stg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^{b, d}
t ≤ 10 s
Maximum Junction-to-Foot (Drain)
Steady State
Notes:
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under steady state conditions is 110 °C/W.
Symbol
R_thJA
R_thJF
Document Number: 66825
S10-2005-Rev. A, 06-Sep-10
Typical
58
38
Maximum
62.5
45
Unit
°C/W
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