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| SI4196DY Datasheet, PDF (1/7 Pages) Vishay Siliconix – N-Channel 20-V (D-S) MOSFET | |||
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New Product
N-Channel 20-V (D-S) MOSFET
Si4196DY
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.027 at VGS = 4.5 V
20
0.032 at VGS = 2.5 V
0.040 at VGS = 1.8 V
ID (A)a, e
8
8
8
Qg (Typ.)
8.3 nC
S1
S2
S3
G4
SO-8
8D
7D
6D
5D
FEATURES
⢠TrenchFET® Power MOSFET
⢠100 % Rg Tested
⢠100 % UIS Tested
⢠Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
⢠DC/DC Converter
⢠Load Switches
D
G
Top View
Ordering Information: Si4196DY-T1-E3 (Lead (Pb)-free)
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current (TJ = 150 °C)
TC = 25 °C
TC = 70 °C
TA = 25 °C
ID
TA = 70 °C
Pulsed Drain Current
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current
Avalanche Energy
IDM
TC = 25 °C
TA = 25 °C
IS
L = 0.1 mH
IAS
EAS
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
PD
TJ, Tstg
Limit
20
±8
8e
8e
6.4b, c
5.1b, c
20
3.8
1.6b, c
5
1.25
4.6
2.9
2.0b, c
1.28b, c
- 55 to 150
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb,d
t ⤠10 s
Maximum Junction-to-Foot (Drain)
Steady State
Notes:
a. Based on TC = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 110 °C/W.
e. Package limited.
Symbol
RthJA
RthJF
Typical
52
22
Maximum
62.5
27
Unit
V
A
mJ
W
°C
Unit
°C/W
Document Number: 65534
S09-2112-Rev. A, 12-Oct-09
www.vishay.com
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