SI4176DY Datasheet, PDF (1/9 Pages) Vishay Siliconix – N-Channel 30-V (D-S) MOSFET

New Product
N-Channel 30-V (D-S) MOSFET
Si4176DY
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
0.020 at V_GS = 10 V
30
0.027 at V_GS = 4.5 V
I_D (A)
12^a
10.4
Q_g (Typ.)
4.7 nC
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET^® Power MOSFET
• 100 % R_g and UIS Tested
• Compliant to RoHS Directive 2002/95/EC
S1
S2
S3
G4
SO-8
8D
7D
6D
5D
APPLICATIONS
• Load Switch
• Low Current dc-to-dc
• Notebook
D
G
Top View
Ordering Information: Si4176DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
V_DS
30
V
V_GS
± 20
T_C = 25 °C
12^a
Continuous Drain Current (T_J = 150 °C)
T_C = 70 °C
T_A = 25 °C
I_D
9.7
8.3^{b, c}
Pulsed Drain Current
T_A = 70 °C
6.6^{b, c}
A
I_DM
40
Continuous Source-Drain Diode Current
T_C = 25 °C
T_A = 25 °C
I_S
4.2
2^{b, c}
Single Pulse Avalanche Current
L = 0.1 mH
I_AS
10
Single Pulse Avalanche Energy
E_AS
5
mJ
T_C = 25 °C
5
Maximum Power Dissipation
T_C = 70 °C
T_A = 25 °C
P_D
3.2
2.4^{b, c}
W
T_A = 70 °C
1.5^{b, c}
Operating Junction and Storage Temperature Range
T_J, T_stg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^{b, d}
Maximum Junction-to-Foot (Drain)
t ≤ 10 s
Steady State
Notes:
a. Package Limited.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 85 °C/W.
Symbol
R_thJA
R_thJF
Typical
42
19
Maximum
53
25
Unit
°C/W
Document Number: 65539
S09-2430-Rev. A, 16-Nov-09
www.vishay.com
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