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| SI4170DY Datasheet, PDF (1/7 Pages) Vishay Siliconix – N-Channel 30-V (D-S) MOSFET | |||
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New Product
N-Channel 30-V (D-S) MOSFET
Si4170DY
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
30
RDS(on) (Ω)
0.0035 at VGS = 10 V
0.0045 at VGS = 4.5 V
ID (A)a
30
27
Qg (Typ.)
29 nC
SO-8
S1
S2
S3
G4
8D
7D
6D
5D
Top View
Ordering Information: Si4170DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
⢠Halogen-free
⢠TrenchFET® Power MOSFET
⢠100 % Rg Tested
⢠100 % Avalanche Tested
APPLICATIONS
⢠Notebook PC Core
- Low Side Switch
D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C
TA = 25 °C
ID
TA = 70 °C
Pulsed Drain Current
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
IDM
TC = 25 °C
TA = 25 °C
IS
L = 0.1 mH
IAS
EAS
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
PD
TA = 70 °C
Operating Junction and Storage Temperature Range
TJ, Tstg
Limit
30
± 20
30
22.8
21.8b, c
17.3b, c
70
5.4
2.7b, c
40
80
6
3.3
3.0b, c
1.9b, c
- 55 to 150
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, d
Maximum Junction-to-Foot (Drain)
t ⤠10 s
Steady State
Notes:
a. Based on TC = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 85 °C/W.
Symbol
RthJA
RthJF
Typical
33
16
Maximum
42
21
RoHS
COMPLIANT
Unit
V
A
mJ
W
°C
Unit
°C/W
Document Number: 68396
S-81054-Rev. A, 12-May-08
www.vishay.com
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