SI4143DY Datasheet, PDF (1/9 Pages) Vishay Siliconix – P-Channel 30 V (D-S) MOSFET

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Si4143DY
Vishay Siliconix
P-Channel 30 V (D-S) MOSFET
PRODUCT SUMMARY
V_DS (V)
-30
R_DS(on) (Ω) MAX.
0.0062 at V_GS = -10 V
0.0074 at V_GS = -6 V
0.0092 at V_GS = -4.5 V
I_D (A) ^d
-25.3
-23.2
-20.8
Q_g (TYP.)
54 nC
SO-8 Single
D
D5
D6
D7
8
FEATURES
• TrenchFET^® power MOSFET
• 100 % R_g and UIS tested
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• Adaptor switch, load switch
S
• Power management
• Notebook computers
G
4
3G
2S
1S
S
Top View
Ordering Information:
Si4143DY-T1-GE3 (lead (Pb)-free and halogen-free)
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150 °C)
Pulsed Drain Current (t = 300 μs)
Continuous Source-Drain Diode Current
Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
T_C = 25 °C
T_C = 70 °C
T_A = 25 °C
T_A = 70 °C
T_C = 25 °C
T_A = 25 °C
L = 0.1 mH
T_C = 25 °C
T_C = 70 °C
T_A = 25 °C
T_A = 70 °C
V_DS
V_GS
I_D
I_DM
I_S
I_AS
E_AS
P_D
T_J, T_stg
LIMIT
-30
± 25
-25.3
-20.2
-17.7 ^{a, b}
-14.1 ^{a, b}
-70
-5
-2.4 ^{a, b}
-30
45
6
3.8
2.9 ^{a, b}
1.9 ^{a, b}
-55 to 150
UNIT
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient ^{a, c}
Maximum Junction-to-Foot
Notes
a. Surface mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. Maximum under steady state conditions is 84 °C/W.
d. Based on T_C = 25 °C.
t ≤ 10 s
Steady State
SYMBOL
R_thJA
R_thJF
TYPICAL
36
16
MAXIMUM
43
21
UNIT
°C/W
S14-0910-Rev. A, 28-Apr-14
1
Document Number: 63242
For technical questions, contact: [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000