SI4134DY_11 Datasheet, PDF (1/10 Pages) Vishay Siliconix – N-Channel 30 V (D-S) MOSFET

N-Channel 30 V (D-S) MOSFET
Si4134DY
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
R_DS(on) ()
30
0.014 at V_GS = 10 V
0.0175 at V_GS = 4.5 V
I_D (A)^a
14
12.5
Q_g (Typ.)
7.3 nC
S1
S2
S3
G4
SO-8
8^D
7D
6D
5D
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET^® Power MOSFET
• 100 % R_g and UIS Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• DC/DC Conversion
- Notebook System Power
D
G
Top View
Ordering Information: Si4134DY-T1-E3 (Lead (Pb)-free)
Si4134DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS (T_A = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150 °C)
Pulsed Drain Current
T_C = 25 °C
T_C = 70 °C
T_A = 25 °C
T_A = 70 °C
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current
Avalanche Energy
T_C = 25 °C
T_A = 25 °C
L = 0.1 mH
T_C = 25 °C
Maximum Power Dissipation
T_C = 70 °C
T_A = 25 °C
T_A = 70 °C
Operating Junction and Storage Temperature Range
V_DS
V_GS
I_D
I_DM
I_S
I_AS
E_AS
P_D
T_J, T_stg
30
± 20
14
11.2
9.9^{b, c}
7.9^{b, c}
32
4.1
2.0^{b, c}
15
11.25
5
3.2
2.5^{b, c}
1.6^{b, c}
- 55 to 150
S
N-Channel MOSFET
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^{b, d}
t  10 s
Maximum Junction-to-Foot (Drain)
Steady State
Notes:
a. Based on T_C = 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under steady state conditions is 85 °C/W.
Symbol
R_thJA
R_thJF
Typical
38
20
Maximum
50
25
Unit
°C/W
Document Number: 68999
www.vishay.com
S11-0650-Rev. C, 11-Apr-11
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000