SI4134DY Datasheet, PDF (1/7 Pages) Vishay Siliconix – N-Channel 30-V (D-S) MOSFET

New Product
N-Channel 30-V (D-S) MOSFET
Si4134DY
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
0.014 at V_GS = 10 V
30
0.0175 at V_GS = 4.5 V
I_D (A)^a
14
12.5
Q_g (Typ.)
7.3 nC
FEATURES
• Halogen-free According to IEC 61249-2-21
• TrenchFET^® Power MOSFET
• 100 % R_g and UIS Tested
APPLICATIONS
• DC/DC Conversion
- Notebook System Power
S1
S2
S3
G4
SO-8
8^D
7D
6D
5D
Top View
Ordering Information: Si4134DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
T_C = 25 °C
Continuous Drain Current (T_J = 150 °C)
T_C = 70 °C
T_A = 25 °C
I_D
Pulsed Drain Current
T_A = 70 °C
I_DM
Continuous Source-Drain Diode Current
T_C = 25 °C
T_A = 25 °C
Single Pulse Avalanche Current
Avalanche Energy
L = 0.1 mH
Maximum Power Dissipation
T_C = 25 °C
T_C = 70 °C
T_A = 25 °C
T_A = 70 °C
Operating Junction and Storage Temperature Range
I_S
I_AS
E_AS
P_D
T_J, T_stg
Limit
30
± 20
14
11.2
9.9^{b, c}
7.9^{b, c}
32
4.1
2.0^{b, c}
15
11.25
5
3.2
2.5^{b, c}
1.6^{b, c}
- 55 to 150
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^{b, d}
Maximum Junction-to-Foot (Drain)
t ≤ 10 s
Steady State
Notes:
a. Based on T_C = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 85 °C/W.
Symbol
R_thJA
R_thJF
Typical
38
20
Maximum
50
25
Unit
V
A
mJ
W
°C
Unit
°C/W
Document Number: 68999
S-82774-Rev. A, 17-Nov-08
www.vishay.com
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