 English |
|
|
|
|
|
|
|
| SI4124DY Datasheet, PDF (1/10 Pages) Vishay Siliconix – N-Channel 40-V (D-S) MOSFET | |||
| |||
|
New Product
N-Channel 40-V (D-S) MOSFET
Si4124DY
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.0075 at VGS = 10 V
40
0.009 at VGS = 4.5 V
ID (A)d
20.5
18.7
Qg (Typ.)
21 nC
SO-8
S1
S2
S3
G4
8D
7D
6D
5D
Top View
Ordering Information: Si4124DY-T1-E3 (Lead (Pb)-free)
Si4124DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
⢠Halogen-free According to IEC 61249-2-21
Available
⢠TrenchFET® Power MOSFET
⢠100 % Rg Tested
APPLICATIONS
⢠Synchronous Rectification
⢠DC/DC
D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
VDS
40
V
VGS
± 20
TC = 25 °C
20.5
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C
TA = 25 °C
ID
TA = 70 °C
16.4
13.6a, b
10.9a, b
A
Pulsed Drain Current
IDM
50
Avalanche Current
Avalanche Energy
L = 0.1 mH
IAS
33
EAS
54
mJ
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
IS
4.7
2.1a, b
A
TC = 25 °C
5.7
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
PD
3.6
2.5a, b
W
TA = 70 °C
1.6a, b
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta, c
Maximum Junction-to-Foot (Drain)
t ⤠10 s
Steady State
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. Maximum under Steady State conditions is 85 °C/W.
d. Based on TC = 25 °C.
Symbol
RthJA
RthJF
Typical
39
18
Maximum
50
22
Unit
°C/W
Document Number: 68601
S09-0392-Rev. B, 09-Mar-09
www.vishay.com
1
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese