SI4108DY Datasheet, PDF (1/10 Pages) Vishay Siliconix – N-Channel 75-V (D-S) MOSFET

New Product
N-Channel 75-V (D-S) MOSFET
Si4108DY
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
75
0.0098 at V_GS = 10 V
I_D (A)^a
20.5
Q_g (Typ.)
36 nC
S1
S2
S3
G4
SO-8
8D
7D
6D
5D
FEATURES
• Halogen-free
• TrenchFET^® Power MOSFET
• 100 % R_g Tested
• 100 % UIS Tested
APPLICATIONS
• Primary Side Switch
• Half Bridge
• Intermediate Bus Converter
G
RoHS
COMPLIANT
D
Top View
Ordering Information: Si4108DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150 °C)
T_C = 25 °C
T_C = 70 °C
T_A = 25 °C
T_A = 70 °C
Pulsed Drain Current
Continuous Source-Drain Diode Current
T_C = 25 °C
T_A = 25 °C
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
L = 0.1 mH
Maximum Power Dissipation
T_C = 25 °C
T_C = 70 °C
T_A = 25 °C
T_A = 70 °C
Operating Junction and Storage Temperature Range
V_DS
V_GS
I_D
I_DM
I_S
I_AS
E_AS
P_D
T_J, T_stg
Soldering Recommendations (Peak Temperature)
Limit
75
± 20
20.5
16.4
13.8^{b, c}
11.1^{b, c}
60
6.5
3^{b, c}
32
51.2
7.8
5
3.6^{b, c}
2.3^{b, c}
- 55 to 150
260
S
N-Channel MOSFET
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^{b, d}
Maximum Junction-to-Foot (Drain)
t ≤ 10 s
Steady State
Notes:
a. Based on T_C = 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 80 °C/W.
Symbol
R_thJA
R_thJF
Typical
29
13
Maximum
35
16
Unit
°C/W
Document Number: 68635
S-81195-Rev. A, 26-May-08
www.vishay.com
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