SI4104DY-T1-E3 Datasheet, PDF (1/10 Pages) Vishay Siliconix – N-Channel 100-V (D-S) MOSFET

New Product
N-Channel 100-V (D-S) MOSFET
Si4104DY
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
100
0.105 at V_GS = 10 V
I_D (A)^a
4.6
Q_g (Typ.)
8.5 nC
S1
S2
S3
G4
SO-8
Top View
8^D
7D
6D
5D
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchET^® Power MOSFET
• 100 % R_g Tested
• 100 % Avalanche Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• High Frequency DC/DC Converter
• High Frequency Boost Converter
• LED Backlight for LCD TV
D
G
Ordering Information: Si4104DY-T1-E3 (Lead (Pb)-free)
Si4104DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150 °C)
Pulsed Drain Current
T_C = 25 °C
T_C = 70 °C
T_A = 25 °C
T_A = 70 °C
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
T_C = 25 °C
T_A = 25 °C
L = 0.1 mH
T_C = 25 °C
Maximum Power Dissipation
T_C = 70 °C
T_A = 25 °C
T_A = 70 °C
Operating Junction and Storage Temperature Range
V_DS
V_GS
I_D
I_DM
I_S
I_AS
E_AS
P_D
T_J, T_stg
Limit
100
± 20
4.6
3.7
3.2^{b, c}
2.6^{b, c}
15
4.1
2.0^{b, c}
9
4
5.0
3.2
2.5^{b, c}
1.6^{b, c}
- 55 to 150
S
N-Channel MOSFET
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^{b, d}
t ≤ 10 s
Maximum Junction-to-Foot (Drain)
Steady State
Notes:
a. Based on T_C = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 85 °C/W.
Symbol
R_thJA
R_thJF
Typical
38
20
Maximum
50
25
Unit
°C/W
Document Number: 69936
S09-0764-Rev. B, 04-May-09
www.vishay.com
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