SI4101DY Datasheet, PDF (1/9 Pages) Vishay Siliconix – P-Channel 30 V (D-S) MOSFET

New Product
P-Channel 30 V (D-S) MOSFET
Si4101DY
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
R_DS(on) () Max.
- 30
0.0060 at V_GS = - 10 V
0.0080 at V_GS = - 4.5 V
SO-8
I_D (A)^d
- 25.7
- 22.3
Q_g (Typ.)
65 nC
S1
S2
S3
G4
8D
7D
6D
5D
FEATURES
• TrenchFET^® Power MOSFET
• 100 % R_g and UIS Tested
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• Adaptor Switch, Load Switch
S
• Power Management
• Notebook Computers and
Portable Battery Packs
G
Top View
Ordering Information:
Si4101DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
V_DS
V_GS
- 30
V
± 20
T_C = 25 °C
- 25.7
Continuous Drain Current (T_J = 150 °C)
Pulsed Drain Current (t = 300 µs)
T_C = 70 °C
T_A = 25 °C
I_D
T_A = 70 °C
I_DM
- 20.6
- 18^{a, b}
- 14.4^{a, b}
A
- 70
Continuous Source-Drain Diode Current
Avalanche Current
Single-Pulse Avalanche Energy
T_C = 25 °C
T_A = 25 °C
I_S
L = 0.1 mH
I_AS
E_AS
-5
- 2.4^{a, b}
- 30
45
mJ
T_C = 25 °C
6
Maximum Power Dissipation
T_C = 70 °C
T_A = 25 °C
P_D
3.8
2.9^{a, b}
W
T_A = 70 °C
1.9^{a, b}
Operating Junction and Storage Temperature Range
T_J, T_stg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^{a, c}
Maximum Junction-to-Foot
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. Maximum under steady state conditions is 84 °C/W.
d. Based on T_C = 25 °C.
t 10 s
Steady State
Symbol
R_thJA
R_thJF
Typical
36
16
Maximum
43
21
Unit
°C/W
Document Number: 62828
For technical questions, contact: [e-mail]
www.vishay.com
S13-0110-Rev. A, 21-Jan-13
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000