SI4004DY Datasheet, PDF (1/10 Pages) Vishay Siliconix – N-Channel 20 V (D-S) MOSFET

New Product
N-Channel 20 V (D-S) MOSFET
Si4004DY
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
20
R_DS(on) (Ω)
0.0138 at V_GS = 10 V
0.0192 at V_GS = 4.5 V
I_D (A)^{a, e}
12
12
Q_g (Typ.)
10.6 nC
S1
S2
S3
G4
SO-8
8^D
7D
6D
5D
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET^® Power MOSFET
• 100 % R_g and UIS Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• DC/DC Converters
D
G
Top View
Ordering Information: Si4004DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150 °C)
Pulsed Drain Current
T_C = 25 °C
T_C = 70 °C
T_A = 25 °C
T_A = 70 °C
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current
Avalanche Energy
T_C = 25 °C
T_A = 25 °C
L = 0.1 mH
T_C = 25 °C
Maximum Power Dissipation
T_C = 70 °C
T_A = 25 °C
T_A = 70 °C
Operating Junction and Storage Temperature Range
V_DS
V_GS
I_D
I_DM
I_S
I_AS
E_AS
P_D
T_J, T_stg
Limit
20
± 20
12^e
12^e
11^{b, c}
8.8^{b, c}
70
4.2
2.1^{b, c}
25
31
5.0
3.2
2.5^{b, c}
1.6^{b, c}
- 55 to 150
S
N-Channel MOSFET
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^{b, d}
t ≤ 10 s
Maximum Junction-to-Foot (Drain)
Steady State
Notes:
a. Based on T_C = 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under steady state conditions is 92 °C/W.
e. Package limited.
Document Number: 70338
S10-1288-Rev. A, 31-May-10
Symbol
R_thJA
R_thJF
Typical
43
19
Maximum
50
25
Unit
°C/W
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