SI3993DV Datasheet, PDF (1/10 Pages) Vishay Siliconix – Dual P-Channel 30-V (D-S) MOSFET

Dual P-Channel 30-V (D-S) MOSFET
Si3993DV
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
- 30
0.133 at V_GS = - 10 V
0.245 at V_GS = - 4.5 V
I_D (A)
- 2.2
- 1.6
TSOP-6
Top View
G1
6
D1
1
3 mm S2
2
5
S1
G2
3
4
D2
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET^® Power MOSFET
• Symetrical Dual P-Channel
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Battery Switch for Portable Devices
• Computers
- Bus Switch
- Load Switch
S₁
S₂
G₁
G₂
2.85 mm
Ordering Information: Si3993DV-T1-E3 (Lead (Pb)-free)
Si3993DV-T1-GE3 (Lead (Pb)-free and Halogen-free)
Marking Code:
MFxxx
D₁
P-Channel MOSFET
D₂
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
5s
Steady State
Unit
Drain-Source Voltage
Gate-Source Voltage
V_DS
- 30
V
V_GS
± 20
Continuous Drain Current (T_J = 150 °C)^a
Pulsed Drain Current
T_A = 25 °C
T_A = 70 °C
I_D
- 2.2
- 1.7
- 1.8
- 1.4
A
I_DM
-8
Continuous Source Current (Diode Conduction)^a
I_S
- 1.05
- 0.75
Maximum Power Dissipation^a
T_A = 25 °C
T_A = 70 °C
P_D
1.15
0.83
0.73
0.53
W
Operating Junction and Storage Temperature Range
T_J, T_stg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Foot (Drain)
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
t≤5s
Steady State
Steady State
Symbol
R_thJA
R_thJF
Document Number: 72320
S09-2275-Rev. C, 02-Nov-09
Typical
93
130
75
Maximum
110
150
90
Unit
°C/W
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