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| SI3993CDV Datasheet, PDF (1/11 Pages) Vishay Siliconix – Dual P-Channel 30 V (D-S) MOSFET | |||
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New Product
Dual P-Channel 30 V (D-S) MOSFET
Si3993CDV
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
- 30
RDS(on) (ï)
0.111 at VGS = - 10 V
0.188 at VGS = - 4.5 V
ID (A)a
- 2.9
- 2.2
Qg (Typ.)
2.7 nC
TSOP-6
Top View
G1
1
6
D1
FEATURES
⢠Halogen-free According to IEC 61249-2-21
Definition
⢠TrenchFET® Power MOSFET
⢠100 % Rg Tested
⢠Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
⢠Load Switch for Portable Applications
⢠Battery Switch for Portable Devices
⢠Computers
- Bus Switch
S1
S2
- Load Switch
3 mm S2
2
5
S1
G2
3
4
D2
2.85 mm
Marking Code
MJ XXX
Lot Traceability
and Date Code
Part # Code
Ordering Information: Si3993CDV-T1-GE3 (Lead (Pb)-free and Halogen-free)
G1
G2
D1
P-Channel MOSFET
D2
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
VDS
- 30
V
VGS
± 20
TC = 25 °C
- 2.9
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C
TA = 25 °C
ID
- 2.3
- 2.6b, c
TA = 70 °C
- 2.1b, c
A
Pulsed Drain Current
IDM
-8
TC = 25 °C
Continuous Source-Drain Diode Current
TA = 25 °C
IS
- 1.17
- 0.95b, c
TC = 25 °C
1.4
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
PD
0.9
1.14b, c
W
TA = 70 °C
0.73b, c
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, d
tï£5s
Maximum Junction-to-Foot
Steady State
Notes:
a. TC = 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under steady state conditions is 150 °C/W.
Symbol
RthJA
RthJF
Typical
93
75
Maximum
110
90
Unit
°C/W
Document Number: 67331
S11-0240-Rev. A, 14-Feb-11
www.vishay.com
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