SI3981DV Datasheet, PDF (1/6 Pages) Vishay Siliconix – Dual P-Channel 20-V (D-S) MOSFET

New Product
Si3981DV
Vishay Siliconix
Dual P-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (W)
0.185 @ V_GS = −4.5 V
−20
0.260 @ V_GS = −2.5 V
0.385 @ V_GS = −1.8 V
I_D (A)
−1.9
−1.6
−0.7
FEATURES
D TrenchFETr Power MOSFET
APPLICATIONS
D Battery Switch for Portable Devices
D Computers
− Bus Switch
− Load Switch
TSOP-6
Top View
G1
6
D1
1
3 mm S2
2
5
S1
G2
3
4
D2
2.85 mm
Ordering Information: Si3981DV-T1—E3
Marking Code: MCxxx
S₁
G₁
S₂
G₂
D₁
P-Channel MOSFET
D₂
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 secs Steady State
Drain-Source Voltage
Gate-Source Voltage
V_DS
−20
V_GS
"8
Continuous Drain Current (T_J = 150_C)^a
Pulsed Drain Current
Continuous Diode Current (Diode Conduction)^a
Maximum Power Dissipation^a
Operating Junction and Storage Temperature Range
T_A = 25_C
T_A = 70_C
T_A = 25_C
T_A = 70_C
I_D
I_DM
I_S
P_D
T_J, T_stg
−1.9
−1.6
−1.5
−1.3
−8
−1.0
−0.72
1.08
0.80
0.69
0.51
−55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 72502
S-40575—Rev. C, 29-Mar-04
t v 5 sec
Steady State
Steady State
Symbol
R_thJA
R_thJF
Typical
97
132
78
Maximum
115
155
95
Unit
_C/W
www.vishay.com
1