SI3971DV Datasheet, PDF (1/5 Pages) Vishay Siliconix – Dual P-Channel 12-V (D-S) MOSFET

New Product
Si3971DV
Vishay Siliconix
Dual P-Channel 12-V (D-S) MOSFET
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (W)
0.140 @ V_GS = −4.5 V
−12
0.200 @ V_GS = −2.5 V
0.300 @ V_GS = −1.8 V
I_D (A)
−2.2
−1.8
−0.7
FEATURES
D TrenchFETr Power MOSFET
APPLICATIONS
D Portable
− PA Switch
− Load Switch
TSOP-6
Top View
G1
1
6
D1
3 mm S2
2
5
S1
G2
3
4
D2
2.85 mm
Ordering Information: Si3971DV-T1—E3
Marking Code: MAxxx
S₁
S₂
G₁
G₂
D₁
P-Channel MOSFET
D₂
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 secs Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150_C)^a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)^a
Maximum Power Dissipation^a
Operating Junction and Storage Temperature Range
T_A = 25_C
T_A = 70_C
T_A = 25_C
T_A = 70_C
V_DS
V_GS
I_D
I_DM
I_S
P_D
T_J, T_stg
−12
"8
−2.2
−1.9
−1.7
−1.5
−8
−1.0
−0.72
1.08
0.80
0.69
0.51
−55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 72501
S-40575—Rev. C, 29-Mar-04
t v 5 sec
Steady State
Steady State
Symbol
R_thJA
R_thJF
Typical
97
132
78
Maximum
115
155
95
Unit
_C/W
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