SI3951DV Datasheet, PDF (1/7 Pages) Vishay Siliconix – Dual P-Channel 20-V (D-S) MOSFET

New Product
Dual P-Channel 20-V (D-S) MOSFET
Si3951DV
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (Ω)
0.115 at V_GS = - 4.5 V
- 20
0.205 at V_GS = - 2.5 V
I_D (A)^a
- 2.7
- 2.0
Q_g (Typ)
3.2 nC
FEATURES
• TrenchFET^® Power MOSFET
• PWM Optimized
• 100 % R_g tested
RoHS
COMPLIANT
TSOP-6
Top View
S₁
S₂
G1
1
6
D1
3 mm S2
2
5
S1
G2
3
4
D2
2.85 mm
Ordering Information: Si3951DV-T1-E3 (Lead (Pb)-free)
Marking Code
MG XXX
Lot Traceability
and Date Code
Part # Code
G₁
G₂
D₁
D₂
P-Channel MOSFET P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150 °C)
Pulsed Drain Current
T_C = 25 °C
T_C = 70 °C
T_A = 25 °C
T_A = 70 °C
Continuous Source-Drain Diode Current
T_C = 25 °C
T_A = 25 °C
T_C = 25 °C
Maximum Power Dissipation^a
T_C = 70 °C
T_A = 25 °C
T_A = 70 °C
Operating Junction and Storage Temperature Range
V_DS
V_GS
I_D
I_DM
I_S
P_D
T_J, T_stg
Limit
- 20
± 12
- 2.7
- 2.2
- 2.5^{b, c}
- 2.0^{b, c}
10
- 1.67
- 0.95^{b, c}
2.0
1.3
1.14^{b, c}
0.73^{b, c}
- 55 to 150
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^{b, d}
Maximum Junction-to-Foot (Drain)
t ≤ 5 sec
Steady State
Notes:
a. Based on T_C = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 5 sec.
d. Maximum under Steady State conditions is 130 °C/W.
Symbol
R_thJA
R_thJF
Typical
93
75
Maximum
110
90
Unit
V
A
W
°C
Unit
°C/W
Document Number: 73700
S-71597-Rev. B, 30-Jul-07
www.vishay.com
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