SI3932DV Datasheet, PDF (1/7 Pages) Vishay Siliconix – Dual N-Channel 30 V (D-S) MOSFET

New Product
Dual N-Channel 30 V (D-S) MOSFET
Si3932DV
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
0.058 at V_GS = 10 V
30
0.073 at V_GS = 4.5 V
I_D (A)^a
3.7
3.3
Q_g (Typ.)
1.8 nC
TSOP-6
Top View
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET^® Power MOSFET
• 100 % R_g Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Load Switch for Portable Applications
• DC/DC Converters
G1
1
6
D1
3 mm S2
2
5
S1
G2
3
4
D2
2.85 mm
Marking Code
MH XXX
Lot Traceability
and Date Code
Part # Code
Ordering Information: Si3932DV-T1-GE3 (Lead (Pb)-free and Halogen-free)
D₁
D₂
G₁
G₂
S₁
N-Channel MOSFET
S₂
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150 °C)
Pulsed Drain Current
T_C = 25 °C
T_C = 70 °C
T_A = 25 °C
T_A = 70 °C
Continuous Source-Drain Diode Current
T_C = 25 °C
T_A = 25 °C
T_C = 25 °C
Maximum Power Dissipation
T_C = 70 °C
T_A = 25 °C
T_A = 70 °C
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)^{d, e}
V_DS
V_GS
I_D
I_DM
I_S
P_D
T_J, T_stg
Limit
30
± 20
3.7
3
3.4^{b, c}
2.7^{b, c}
15
1.17
0.95^{b, c}
1.4
0.9
1.14^{b, c}
0.73^{b, c}
- 55 to 150
260
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^{b, d}
t≤5s
Maximum Junction-to-Foot
Steady State
Notes:
a. T_C = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under steady state conditions is 150 °C/W.
Symbol
R_thJA
R_thJF
Typical
93
75
Maximum
110
90
Unit
V
A
W
°C
Unit
°C/W
Document Number: 65736
S10-0642-Rev. A, 22-Mar-10
www.vishay.com
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