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SI3915DV Datasheet, PDF (1/4 Pages) Vishay Siliconix – Dual P-Channel 12-V (D-S) MOSFET | |||
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New Product
Si3915DV
Vishay Siliconix
Dual P-Channel 12-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
0.120 @ VGS = â4.5 V
â12
0.175 @ VGS = â2.5 V
0.240 @ VGS = â1.8 V
ID (A)
â2.5
â2.0
â1.7
TSOP-6
Top View
G1
1
6
D1
3 mm S2
2
5
S1
G2
3
4
D2
2.85 mm
S1
S2
G1
G2
D1
P-Channel MOSFET
D2
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 secs Steady State
Drain-Source Voltage
Gate-Source Voltage
VDS
â12
VGS
"8
Continuous Drain Current (TJ = 150_C)a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)a
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
TA = 25_C
TA = 70_C
TA = 25_C
TA = 70_C
ID
IDM
IS
PD
TJ, Tstg
â2.5
â2.0
â2.0
â1.7
â7
â1.05
â0.75
1.15
0.83
0.73
0.53
â55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1â x 1â FR4 Board.
Document Number: 71299
S-01890âRev. A, 28-Aug-00
t v 5 sec
Steady State
Steady State
Symbol
RthJA
RthJF
Typical
93
130
75
Maximum
110
150
90
Unit
_C/W
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