SI3911DV Datasheet, PDF (1/4 Pages) Vishay Siliconix – Dual P-Channel 20-V (D-S) MOSFET

New Product
Si3911DV
Vishay Siliconix
Dual P-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (W)
0.145 @ V_GS = –4.5 V
–20
0.200 @ V_GS = –2.5 V
0.300 @ V_GS = –1.8 V
TSOP-6
Top View
G1
1
6
D1
3 mm S2
2
5
S1
G2
3
4
D2
2.85 mm
I_D (A)
–2.2
–1.8
–1.5
S₁
G₁
D₁
P-Channel MOSFET
S₂
G₂
D₂
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 secs Steady State
Drain-Source Voltage
Gate-Source Voltage
V_DS
–20
V_GS
"8
Continuous Drain Current (T_J = 150_C)^a
Pulsed Drain Current
Continuous Diode Current (Diode Conduction)^a
Maximum Power Dissipation^a
Operating Junction and Storage Temperature Range
T_A = 25_C
T_A = 70_C
T_A = 25_C
T_A = 70_C
I_D
I_DM
I_S
P_D
T_J, T_stg
–2.2
–1.8
–1.8
–1.5
"8
–1.05
–0.75
1.15
0.83
0.73
0.53
–55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71380
S-20275—Rev. B, 18-Mar-02
t v 5 sec
Steady State
Steady State
Symbol
R_thJA
R_thJF
Typical
93
130
90
Maximum
110
150
90
Unit
_C/W
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