SI3900DV_09 Datasheet, PDF (1/9 Pages) Vishay Siliconix – Dual N-Channel 20-V (D-S) MOSFET

Dual N-Channel 20-V (D-S) MOSFET
Si3900DV
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
20
0.125 at V_GS = 4.5 V
0.200 at V_GS = 2.5 V
I_D (A)
2.4
1.8
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET^® Power MOSFET
• Compliant to RoHS Directive 2002/95/EC
TSOP-6
Top View
G1
1
6
D1
3 mm S2
2
5
S1
G2
3
4
D2
2.85 mm
Ordering Information: Si3900DV-T1-E3 (Lead (Pb)-free)
Si3900DV-T1-GE3 (Lead (Pb)-free and Halogen-free)
D₁
D₂
G₁
G₂
S₁
N-Channel MOSFET
S₂
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
5s
Steady State
Unit
Drain-Source Voltage
Gate-Source Voltage
V_DS
20
V
V_GS
± 12
Continuous Drain Current (T_J = 150 °C)^a
T_A = 25 °C
T_A = 85 °C
I_D
2.4
2.0
1.7
1.4
A
Pulsed Drain Current (10 µs Pulse Width)
I_DM
8
Continuous Source Current (Diode Conduction)^a
I_S
1.05
0.75
Maximum Power Dissipation^a
T_A = 25 °C
T_A = 85 °C
P_D
1.15
0.83
0.59
0.53
W
Operating Junction and Storage Temperature Range
T_J, T_stg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Foot (Drain)
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
t≤5s
Steady State
Steady State
Symbol
R_thJA
R_thJF
Typical
93
130
75
Maximum
110
150
90
Unit
°C/W
Document Number: 71178
S09-2275-Rev. D, 02-Nov-09
www.vishay.com
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