SI3900DV Datasheet, PDF (1/4 Pages) Vishay Siliconix – Dual N-Channel 20-V (D-S) MOSFET

Si3900DV
Vishay Siliconix
Dual N-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
V_DS (V)
20
r_DS(on) (W)
0.125 @ V_GS = 4.5 V
0.200 @ V_GS = 2.5 V
I_D (A)
2.4
1.8
TSOP-6
Top View
G1
1
6
D1
3 mm S2
2
5
S1
G2
3
4
D2
2.85 mm
D₁
D₂
G₁
G₂
S₁
N-Channel MOSFET
S₂
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 sec
Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150_C)^a
Pulsed Drain Current (10 ms Pulse Width)
Continuous Source Current (Diode Conduction)^a
Maximum Power Dissipation^a
Operating Junction and Storage Temperature Range
T_A = 25_C
T_A = 85_C
T_A = 25_C
T_A = 85_C
V_DS
V_GS
I_D
I_DM
I_S
P_D
T_J, T_stg
20
"12
2.4
2.0
1.7
1.4
8
1.05
0.75
1.15
0.83
0.59
0.53
–55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71178
S-03511—Rev. B, 16-Apr-01
t v 5 sec
Steady State
Steady State
Symbol
R_thJA
R_thJF
Typical
93
130
75
Maximum
110
150
90
Unit
_C/W
www.vishay.com
1