SI3879DV Datasheet, PDF (1/10 Pages) Vishay Siliconix – P-Channel 20-V (D-S) MOSFET with Schottky Diode

New Product
Si3879DV
Vishay Siliconix
P-Channel 20-V (D-S) MOSFET with Schottky Diode
PRODUCT SUMMARY
V_DS (V)
- 20
r_DS(on) (Ω)
0.070 at V_GS = - 5.0 V
0.105 at V_GS = - 2.5 V
I_D (A)^a
- 5.0
- 4.2
Q_g (Typ)
4.5 nC
SCHOTTKY PRODUCT SUMMARY
V_KA (V)
V_f (V)
Diode Forward Voltage
20
0.45 at 1 A
I_F (A)^a
2
FEATURES
• LITTLE FOOT^® Plus Schottky Power MOSFET
APPLICATIONS
• HDD
- DC-DC Converter
• Asynchronous Rectification
RoHS
COMPLIANT
TSOP-6
S
Top View
A
1
6
D/K
3 mm S
2
G
3
5
D/K
4
D/K
2.85 mm
Ordering Information: Si3879DV-T1-E3 (Lead (Pb)-free)
Marking Code
IG XXX
Lot Traceability
and Date Code
Part # Code
G
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage (MOSFET)
V_DS
Reverse Voltage (Schottky)
V_KA
Gate-Source Voltage (MOSFET)
V_GS
T_C = 25 °C
Continuous Drain Current (T_J = 150 °C) (MOSFET)
T_C = 70 °C
T_A = 25 °C
I_D
Pulsed Drain Current (MOSFET)
T_A = 70 °C
I_DM
Continuous Source-Drain Diode Current
(MOSFET Diode Conduction)
Average Forward Current (Schottky)
T_C = 25 °C
T_A = 25 °C
I_S
I_F
Pulsed Forward Current (Schottky)
I_FM
T_C = 25 °C
Maximum Power Dissipation (MOSFET)
T_C = 70 °C
T_A = 25 °C
T_A = 70 °C
T_C = 25 °C
P_D
Maximum Power Dissipation (Schottky)
T_C = 70 °C
T_A = 25 °C
T_A = 70 °C
Operating Junction and Storage Temperature Range
T_J, T_stg
Limit
- 20
20
± 12
- 5.0
- 4.0
- 4.0^{b, c}
- 3.0^{b, c}
- 20
- 2.7
- 1.6^{b, c}
2^b
5
3.3
2.1
2.0^{b, c}
1.2^{b, c}
1.9
1.2
1.3^{b, c}
0.9^{b, c}
- 55 to 150
A
K
Unit
V
A
W
°C
Document Number: 74958
S-71290–Rev. A, 02-Jul-07
www.vishay.com
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