SI3867DV_08 Datasheet, PDF (1/6 Pages) Vishay Siliconix – P-Channel 20-V (D-S) MOSFET

P-Channel 20-V (D-S) MOSFET
Si3867DV
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (Ω)
0.051 at V_GS = - 4.5 V
- 20
0.067 at V_GS = - 3.3 V
0.100 at V_GS = - 2.5 V
I_D (A)
- 5.1
- 4.5
- 3.7
3 mm
TSOP-6
Top View
1
6
2
5
3
4
2.85 mm
Ordering Information: Si3867DV-T1
Si3867DV-T1-E3 (Lead (Pb)-free)
FEATURES
• TrenchFET^® Power MOSFET
• PWM Optimized
Pb-free
Available
APPLICATIONS
• DC/DC
- HDD
- Power Supplies
RoHS*
COMPLIANT
• Portable Devices Such As Cell Phones, PDA,
DSC, and DVC
(4) S
(3) G
(1, 2, 5, 6) D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
5 sec
Steady State
Unit
Drain-Source Voltage
Gate-Source Voltage
V_DS
- 20
V
V_GS
± 12
Continuous Drain Current (T_J = 150 °C)^a
Pulsed Drain Current
T_A = 25 °C
T_A = 85 °C
I_D
- 5.1
- 3.7
- 3.9
- 2.8
A
I_DM
- 20
Continuous Diode Current (Diode Conduction)^a
I_S
- 1.7
- 0.9
Maximum Power Dissipation^a
T_A = 25 °C
T_A = 85 °C
P_D
2.0
1.1
1.0
0.6
W
Operating Junction and Storage Temperature Range
T_J, T_stg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Foot (Drain)
Notes:
a. Surface Mounted on 1" x 1" FR4 Board.
t ≤ 5 sec
Steady State
Steady State
Symbol
R_thJA
R_thJF
* Pb containing terminations are not RoHS compliant, exemptions may apply.
Document Number: 72068
S-60422-Rev. C, 20-Mar-06
Typical
45
90
25
Maximum
62.5
110
30
Unit
°C/W
www.vishay.com
1