SI3867DV Datasheet, PDF (1/5 Pages) Vishay Siliconix – P-Channel 20-V (D-S) MOSFET

P-Channel 20-V (D-S) MOSFET
Si3867DV
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (W)
0.051 @ V_GS = - 4.5 V
- 20
0.067 @ V_GS = - 3.3 V
0.100 @ V_GS = - 2.5 V
I_D (A)
- 5.1
- 4.5
- 3.7
3 mm
TSOP-6
Top View
1
6
2
5
3
4
2.85 mm
Ordering Information: Si3867DV-T1
FEATURES
D TrenchFETr Power MOSFET
D PWM Optimized
APPLICATIONS
D DC/DC
- HDD
- Power Supplies
D Portable Devices Such As Cell Phones, PDA,
DSC, and DVC
(4) S
(3) G
(1, 2, 5, 6) D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 secs Steady State
Drain-Source Voltage
Gate-Source Voltage
V_DS
- 20
V_GS
"12
Continuous Drain Current (T_J = 150_C)^a
Pulsed Drain Current
Continuous Diode Current (Diode Conduction)^a
Maximum Power Dissipation^a
Operating Junction and Storage Temperature Range
T_A = 25_C
T_A = 85_C
T_A = 25_C
T_A = 85_C
I_D
I_DM
I_S
P_D
T_J, T_stg
- 5.1
- 3.9
- 3.7
- 2.8
- 20
- 1.7
- 0.9
2.0
1.1
1.0
0.6
- 55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 72068
S-31988—Rev. B, 13-Oct-03
t v 5 sec
Steady State
Steady State
Symbol
R_thJA
R_thJF
Typical
45
90
25
Maximum
62.5
110
30
Unit
_C/W
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