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SI3865CDV Datasheet, PDF (1/10 Pages) Vishay Siliconix – Load Switch with Level-Shift
New Product
Load Switch with Level-Shift
Si3865CDV
Vishay Siliconix
PRODUCT SUMMARY
VDS2 (V) (VIN)
RDS(on) ()
0.060 at VIN = 4.5 V
1.8 to 12
0.095 at VIN = 2.5 V
0.130 at VIN = 1.8 V
ID (A)
2.8
2.2
1.9
DESCRIPTION
The Si3865CDV includes a P- and N-Channel MOSFET in a
single TSOP-6 package. The low on-resistance P-Channel
TrenchFET is tailored for use as a load switch. The
N-Channel, with an external resistor, can be used as a level-
APPLICATION CIRCUITS
Si3865CDV
VIN
R1
4
Q2
6
2, 3
C1
6
VOUT
5
ON/OFF
Co
Q1
Ci
1
R2
R2
LOAD
GND
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• 60 m Low RDS(on) TrenchFET®
• 1.8 V to 12 V Input
• 1.5 V to 8 V Logic Level Control
• Low Profile, Small Footprint TSOP-6 Package
• 3000 V ESD Protection On Input Switch, VON/OFF
• Adjustable Slew-Rate
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Load Switching for Portable Devices
shift to drive the P-Channel load-switch. The N-Channel
MOSFET has internal ESD protection and can be driven by
logic signals as low as 1.5 V. The Si3865CDV operates on
supply lines from 1.8 to 12 V, and can drive loads up to 2.8 A.
45
td(off)
36
IL = 1 A
VON/OFF = 3 V
27
Ci = 10 µF
Co = 1 µF
tf
18
td(on)
9
tr
0
0
2
4
6
8
10
R2 (kΩ)
Switching Variation
R2 at VIN = 2.5 V, R1 = 20 k
COMPONENTS
R1
Pull-Up Resistor
R2 Optional Slew-Rate Control
C1 Optional Slew-Rate Control
Typical 10 k to 1 M*
Typical 0 to 100 k*
Typical 1000 pF
The Si3865CDV is ideally suited for high-side load switching
in portable applications. The integrated N-Channel level-shift
device saves space by reducing external components. The
slew rate is set externally so that rise-times can be tailored to
different load types.
Note:
* Minimum R1 value should be at least 10 x R2 to ensure Q1 turn-on at 1.8 V input.
Document Number: 69010
S10-2142-Rev. C, 20-Sep-10
www.vishay.com
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