SI3865BDV_10 Datasheet, PDF (1/10 Pages) Vishay Siliconix – Load Switch with Level-Shift

Load Switch with Level-Shift
Si3865BDV
Vishay Siliconix
PRODUCT SUMMARY
V_DS2 (V)
R_DS(on) ()
1.8 to 8
0.060 at V_IN = 4.5 V
0.100 at V_IN = 2.5 V
0.175 at V_IN = 1.8 V
I_D (A)
2.9
2.2
1.7
DESCRIPTION
The Si3865BDV includes a p- and n-channel MOSFET in a
single TSOP-6 package. The low on-resistance p-channel
TrenchFET^® is tailored for use as a load switch. The
n-channel, with an external resistor, can be used as a level-
shift to drive the p-channel load-switch. The n-channel
MOSFET has internal ESD protection and can be driven by
logic signals as low as 1.5 V. The Si3865BDV operates on
supply lines from 1.8 V to 8 V, and can drive loads up to 2.9 A.
APPLICATION CIRCUITS
Si3865BDV
V_IN
R1
4
Q2
6
2, 3
C1
6
V_OUT
5
ON/OFF
C_o
Q1
C_i
1
R2
R2
LOAD
GND
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• 60 m Low R_DS(on) TrenchFET^®: 1.8 V Rated
• 1.8 V to 8 V Input
• 1.5 V to 8 V Logic Level Control
• Low Profile, Small Footprint TSOP-6 Package
• 3000 V ESD Protection On Input Switch, V_ON/OFF
• Adjustable Slew-Rate
• Compliant to RoHS Directive 2002/95/EC
40
32
t_d(off)
I_L = 1 A
V_ON/OFF = 3 V
C_i = 10 µF
C_o = 1 µF
t_f
24
16
t_r
8
t_d(on)
0
0
2
4
6
8
R2 (k)
Note: For R2 switching variations with other V_IN/R1
combinations See Typical Characteristics
Switching Variation
R2 at V_IN = 2.5 V, R1 = 20 k
COMPONENTS
R1
Pull-Up Resistor
Typical 10 k to 1 M*
R2 Optional Slew-Rate Control
Typical 0 to 100 k*
C1 Optional Slew-Rate Control
Typical 1000 pF
* Minimum R1 value should be at least 10 x R2 to ensure Q1 turn-on.
The Si3865BDV is ideally suited for high-side load switching
in portable applications. The integrated N-Channel level-shift
device saves space by reducing external components. The
slew rate is set externally so that rise-times can be tailored to
different load types.
Document Number: 72848
S10-2142-Rev. D, 20-Sep-10
www.vishay.com
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