SI3863BDV Datasheet, PDF (1/1 Pages) Vishay Siliconix – Load Switch with Level-Shift

Specification Comparison
Vishay Siliconix
Si3863BDV vs. Si3863DV
Description: Load Switch with Level-Shift
Package:
TSOP-6
Pin Out:
Identical
Part Number Replacements:
Si3863BDV-T1-E3 Replaces Si3863DV-T1-E3
Si3863BDV-T1-E3 Replaces Si3863DV-T1
Summary of Performance:
The Si3863BDV is an upgrade to the original Si3863DV; both parts perform identically, including limits to the parametric tables
below.
ABSOLUTE MAXIMUM RATINGS (T_A = 25^oC UNLESS OTHERWISE NOTED)
Parameter
Symbol
Si3863BDV Si3863DV Unit
Input Voltage
ON/OFF Voltage
VIN
12
VON/OFF
8
12
8
V
Load Current
Continuous
Pulsed
IL
+2.5
+5
+2.5
+5
A
Continuous Intrinsic Diode Conduction
IS
-1
-1
Power Dissipation
PD
0.83
0.83
W
Operating Junction & Storage Temperature Range
Tj & Tstg
-55 to 150
-55 to 150
°C
Maximum Junction-to-Ambient
RthJA
150
150
°C/W
SPECIFICATIONS (T_J = 25^OC UNLESS OTHERWISE NOTED)
Si3863BDV
Parameter
Symbol
Min
Typ
OFF Characteristic
Reverse Leakage Current
Diode Forward Voltage
Dynamic
Input Voltage Range
VIN = 4.5 V
IFL
VSD
-0.75
VIN
2.5
0.057
On-Resistance (p-channel) @ 1A
VIN = 3.0 V
VIN = 2.5 V
rDS(on)
0.082
0.110
On-State (p-channel) Drain-Current
VIN = 10 V
VIN = 5 V
1
ID(on)
1
Max
1
-1
12
0.075
0.105
0.140
Si3863DV
Min Typ Max Unit
1
uA
-0.75
-1
V
2.5
12
nC
0.086
0.105
Ω
0.105
0.125
Ω
0.135
0.165
Ω
1
A
1
A
Document Number 74118
27-May-05
www.vishay.com