SI3861BDV Datasheet, PDF (1/6 Pages) Vishay Siliconix – Load Switch with Level-Shift

New Product
Load Switch with Level-Shift
Si3861BDV
Vishay Siliconix
PRODUCT SUMMARY
V_DS2 (V)
r_DS(on) (W)
4.5 to 20
0.075 @ V_IN = 10 V
0.120 @ V_IN = 5.0 V
0.145 @ V_IN = 4.5 V
I_D (A)
"2.3
"1.9
"1.7
FEATURES
D 4.5-V Rated
D ESD Protected: 3000 V
D 105-mW Low r_DS(on) TrenchFETr
D 4.5 to 20-V Input
D 1.5 to 8 -V Logic Level Control
D Low Profile, Small Footprint TSOP-6 Package
D 3000-V ESD Protection On Input Switch,
V_ON/OFF
D Adjustable Slew-Rate
RoHS
COMPLIANT
DESCRIPTION
The Si3861BDV includes a p- and n-channel MOSFET in a
single TSOP-6 package. The low on-resistance p-channel
TrenchFET^R is tailored for use as a load switch. The
n-channel, with an external resistor, can be used as a
level-shift to drive the p-channel load-switch. The n-channel
MOSFET has internal ESD protection and can be driven by
logic signals as low as 1.5-V. The Si3861DV operates on
supply lines from 4.5 to 20-V, and can drive loads up to 2.3 A.
APPLICATION CIRCUITS
V_IN
R1
Si3861BDV
4
Q2
6
2, 3
C1
6
5
ON/OFF
C_o
Q1
C_i
1
R2
R2
V_OUT
LOAD
GND
Switching Variation
R2 @ V_IN = 5 V, R1 = 20 kW
10
t_f
8
t_d(off)
6
t_r
4
t_d(on)
2
I_L = 1 A
V_ON/OFF = 3 V
C_i = 10 mF
C_o = 1 mF
0
0
2
4
6
8
10
12
R2 (kW)
Note: For R2 switching variations with other V_IN/R1
combinations See Typical Characteristics
COMPONENTS
R1
Pull-Up Resistor
Typical 10 kW to 1 mW*
R2
Optional Slew-Rate Control
Typical 0 to 100 kW*
C1
Optional Slew-Rate Control
Typical 1000 pF
*Minimum R1 value should be at least 10 x R2 to ensure Q1 turn-on.
Document Number: 73343
S-51015—Rev. A, 23-May-05
The Si3861BDV is ideally suited for high-side load switching
in portable applications. The integrated n-channel level-shift
device saves space by reducing external components. The
slew rate is set externally so that rise-times can be tailored to
different load types.
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