|
SI3851DV Datasheet, PDF (1/6 Pages) Vishay Siliconix – P-Channel 30-V (D-S) MOSFET With Schottky Diode | |||
|
New Product
Si3851DV
Vishay Siliconix
P-Channel 30-V (D-S) MOSFET With Schottky Diode
MOSFET PRODUCT SUMMARY
VDS (V)
â30
rDS(on) (W)
0.200 @ VGS = â10 V
0.360 @ VGS = â4.5 V
ID (A)
"1.8
"1.2
SCHOTTKY PRODUCT SUMMARY
VKA (V)
30
Vf (v)
Diode Forward Voltage
0.5 V @ 0.5 A
IF (A)
0.5
TSOP-6
Top View
A
1
6
K
3 mm S
2
5
N/C
G
3
4
D
2.85 mm
S
K
G
D
A
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 sec
Steady State
Drain-Source Voltage (MOSFET and Schottky)
Reverse Voltage (Schottky)
Gate-Source Voltage (MOSFET)
VDS
â30
VKA
30
VGS
"20
"20
Continuous Drain Current (TJ = 150_C) (MOSFET)a
Pulsed Drain Current (MOSFET)
Continuous Source Current (MOSFET Diode Conduction)a
Average Foward Current (Schottky)
Pulsed Foward Current (Schottky)
Maximum Power Dissipation (MOSFET)a
Maximum Power Dissipation (Schottky)a
Operating Junction and Storage Temperature Range
TA = 25_C
TA = 70_C
TA = 25_C
TA = 70_C
TA = 25_C
TA = 70_C
ID
IDM
IS
IF
IFM
PD
TJ, Tstg
"1.8
"1.5
â1.05
1.15
0.73
1.0
0.64
"7
0.5
7
â55 to 150
"1.6
"1.2
â0.75
0.83
0.53
0.76
0.48
Notes
a. Surface Mounted on 1â x 1â FR4 Board.
Unit
V
A
W
_C
Document Number: 70978
S-61845âRev. A, 11-Oct-99
www.vishay.com S FaxBack 408-970-5600
2-1
|
▷ |