SI3850ADV_08 Datasheet, PDF (1/9 Pages) Vishay Siliconix – Complementary MOSFET Half-Bridge (N- and P-Channel)

Si3850ADV
Vishay Siliconix
Complementary MOSFET Half-Bridge (N- and P-Channel)
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (Ω)
N-Channel
20
0.300 at V_GS = 4.5 V
0.410 at V_GS = 3.0 V
P-Channel
- 20
0.640 at V_GS = - 4.5 V
0.980 at V_GS = - 3.0 V
I_D (A)
1.4
1.2
- 0.96
- 0.78
TSOP-6
Top View
G₁
1
6
S₁
D
2
5
D
G₂
3
4
S₂
Ordering Information: Si3850ADV-T1-E3 (Lead (Pb)-free)
FEATURES
• 100 % R_g Tested
S₂
G₂
D
G₁
S₁
RoHS
COMPLIANT
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
N-Channel
P-Channel
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150 °C)
Pulsed Drain Current
Continuous Source Current (Diode Conduction)^a
Maximum Power Dissipation
(Surface Mounted on FR4 Board)
Operating Junction and Storage Temperature Range
T_A = 25 °C
T_A = 70 °C
T_A = 25 °C
T_A = 70 °C
V_DS
V_GS
I_D
I_DM
I_S
P_D
T_J, T_stg
20
- 20
± 12
1.4
- 0.96
1.1
- 0.77
3.5
- 2.0
0.9
- 0.9
1.08
0.70
- 55 to 150
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient (Sourface Mounted on FR4 Board,
± ≤ 10 sec)
Symbol
R_thJA
N- or P-Channel
115
Notes:
Maximum under Steady State condition is 150 °C/W.
Unit
V
A
W
°C
Unit
°C/W
Document Number: 73789
S-60470-Rev. A, 27-Mar-06
www.vishay.com
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