SI3850AD Datasheet, PDF (1/9 Pages) –

Si3850ADV
Vishay Siliconix
Complementary MOSFET Half-Bridge (N- and P-Channel)
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
N-Channel
20
0.300 at V_GS = 4.5 V
0.410 at V_GS = 3.0 V
P-Channel
- 20
0.640 at V_GS = - 4.5 V
0.980 at V_GS = - 3.0 V
I_D (A)
1.4
1.2
- 0.96
- 0.78
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET^® Power MOSFET
• 100 % R_g Tested
• Compliant to RoHS Directive 2002/95/EC
TSOP-6
Top View
G₁
1
6
S₁
D
2
5
D
G₂
3
4
S₂
Ordering Information: Si3850ADV-T1-E3 (Lead (Pb)-free)
Si3850ADV-T1-GE3 (Lead (Pb)-free and Halogen-free)
S₂
G₂
D
G₁
S₁
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
N-Channel
P-Channel
Drain-Source Voltage
V_DS
20
- 20
Gate-Source Voltage
V_GS
± 12
Continuous Drain Current (T_J = 150 °C)
T_A = 25 °C
T_A = 70 °C
I_D
1.4
1.1
- 0.96
- 0.77
Pulsed Drain Current
Continuous Source Current (Diode Conduction)^a
I_DM
3.5
I_S
0.9
- 2.0
- 0.9
Maximum Power Dissipation
(Surface Mounted on FR4 Board)
T_A = 25 °C
T_A = 70 °C
P_D
1.08
0.70
Operating Junction and Storage Temperature Range
T_J, T_stg
- 55 to 150
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient (Surface Mounted on FR4 Board, ± ≤ 10 s)
Note:
Maximum under Steady State condition is 150 °C/W.
Symbol
R_thJA
N- or P-Channel
115
Unit
V
A
W
°C
Unit
°C/W
Document Number: 73789
S09-2110-Rev. B, 12-Oct-09
www.vishay.com
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