SI3831DV Datasheet, PDF (1/6 Pages) Vishay Siliconix – Bi-Directional P-Channel MOSFET/Power Switch

Si3831DV
Vishay Siliconix
Bi-Directional P-Channel MOSFET/Power Switch
PRODUCT SUMMARY
V_DS (V)
"7
r_DS(on) (W)
0.170 @ V_GS = –4.5 V
0.240 @ V_GS = –2.5 V
I_D (A)
"2.4
"2.0
FEATURES
D Low r_DS(on) Symmetrical P-Channel MOSFET
D Integrated Body Bias For Bi-Directional Blocking
D 2.5- to 5.5-V Operation
D Exceeds "2 kV ESD Protected
D Solution for High-Side Battery Disconnect Switching (BDS)
D Supports Battery Switching in Multiple Battery Cell
Phones, PDAs and PCS Products
D Low Profile, Small Footprint TSOP-6 Package
DESCRIPTION
The Si3831DV is a low on-resistance p-channel power
MOSFET providing bi-directional blocking and conduction.
Bi-directional blocking is facilitated by combining a 4-terminal
symmetric p-channel MOSFET with a body bias selector
circuit*. Circuit operation automatically biases the p-channel
body to the most positive source/drain potential thereby
maintaining a reverse bias across the diode present between
the source/drain terminals. Off-state device blocking
characteristics are symmetric, facilitating bi-directional
blocking for high-side battery switching in portable products.
Gate drive is facilitated by negatively biasing the gate relative
to the body potential. The off-state is achieved by biasing the
gate to the most positive supply voltage or to the body
potential. The Si3831DV is available in a 6-pin TSOP-6
package rated for the –25 to 85°C commercial temperature
range.
APPLICATION CIRCUITS
AC/DC
Adapter
Charger
Body
Bias
Si3831DV
Body
Bias
Loads
Si3831DV
FIGURE 1. Charger Demultiplexing
*Patents pending.
Document Number: 70785
S-56947—Rev. C, 28-Dec-98
Body
Bias
Si3831DV
Body
Bias
DC/DC
Si3831DV
Charger
FIGURE 2. Battery Multiplexing (High-Side Switch)
www.vishay.com S FaxBack 408-970-5600
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