SI3812DV_08 Datasheet, PDF (1/7 Pages) Vishay Siliconix – N-Channel 20-V (D-S) MOSFET With Schottky Diode

Si3812DV
Vishay Siliconix
N-Channel 20-V (D-S) MOSFET With Schottky Diode
MOSFET PRODUCT SUMMARY
V_DS (V)
20
r_DS(on) (W)
0.125 @ V_GS = 4.5 V
0.200 @ V_GS = 2.5 V
I_D (A)
2.4
1.8
SCHOTTKY PRODUCT SUMMARY
V_KA (V)
20
V_f (V)
Diode Forward Voltage
0.48 V @ 0.5 A
I_F (A)
0.5
FEATURES
D LITTLE FOOT Plust
D 100% R_g Tested
TSOP-6
Top View
D
K
A
1
6
K
G
3 mm S
2
5
N/C
G
3
4
D
2.85 mm
Ordering Information: Si3812DV-T1
S
A
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 sec
Steady State
Drain-Source Voltage (MOSFET)
Reverse Voltage (Schottky)
Gate-Source Voltage (MOSFET)
V_DS
20
V_KA
20
V_GS
"12
Continuous Drain Current (T_J = 150_C) (MOSFET)^a
Pulsed Drain Current (MOSFET)
Continuous Source Current (MOSFET Diode Conduction)^a
Average Foward Current (Schottky)
Pulsed Foward Current (Schottky)
Maximum Power Dissipation (MOSFET)^a
Maximum Power Dissipation (Schottky)^a
Operating Junction and Storage Temperature Range
T_A = 25_C
T_A = 85_C
T_A = 25_C
T_A = 85_C
T_A = 25_C
T_A = 85_C
I_D
I_DM
I_S
I_F
I_FM
P_D
T_J, T_stg
2.4
2.0
1.7
1.4
8
1.05
0.75
0.5
0.5
8
8
1.15
0.83
0.59
0.53
1.0
0.76
0.52
0.48
- 55 to 150
Unit
V
A
W
_C
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71069
S-31725—Rev. E, 18-Aug-03
www.vishay.com
1