SI3805DV Datasheet, PDF (1/10 Pages) Vishay Siliconix – P-Channel 20-V (D-S) MOSFET with Schottky Diode

New Product
Si3805DV
Vishay Siliconix
P-Channel 20-V (D-S) MOSFET with Schottky Diode
PRODUCT SUMMARY
V_DS (V)
- 20
R_DS(on) (Ω)
0.084 at V_GS = - 10 V
0.108 at V_GS = - 4.5 V
0.175 at V_GS = - 2.5 V
I_D (A)^a
- 3.3
- 2.9
- 2.3
Q_g (Typ.)
4 nC
SCHOTTKY PRODUCT SUMMARY
V_KA (V)
V_f (V)
Diode Forward Voltage
20
0.5 at 1 A
I_F (A)^a
2
TSOP-6
Top View
FEATURES
• LITTLE FOOT^® Plus Schottky Power MOSFET
APPLICATIONS
• HDD
- DC-DC Converter
RoHS
COMPLIANT
S
A
A
1
3 mm S
2
G
3
6
K
5
N/C
4
D
2.85 mm
Ordering Information: Si3805DV-T1-E3 (Lead (Pb)-free)
Marking Code
II XXX
Lot Traceability
and Date Code
Part # Code
G
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage (MOSFET)
V_DS
Reverse Voltage (Schottky)
V_KA
Gate-Source Voltage (MOSFET)
V_GS
T_C = 25 °C
Continuous Drain Current (T_J = 150 °C) (MOSFET)
T_C = 70 °C
T_A = 25 °C
I_D
Pulsed Drain Current (MOSFET)
T_A = 70 °C
I_DM
Continuous Source-Drain Diode Current
(MOSFET Diode Conduction)
Average Forward Current (Schottky)
T_C = 25 °C
T_A = 25 °C
I_S
I_F
Pulsed Forward Current (Schottky)
I_FM
T_C = 25 °C
Maximum Power Dissipation (MOSFET)
T_C = 70 °C
T_A = 25 °C
T_A = 70 °C
T_C = 25 °C
P_D
Maximum Power Dissipation (Schottky)
T_C = 70 °C
T_A = 25 °C
T_A = 70 °C
Operating Junction and Storage Temperature Range
T_J, T_stg
Limit
- 20
20
± 12
- 3.3
- 2.7
- 3.0^{b, c}
- 2.4^{b, c}
- 15
- 1.2
- 0.9^{b, c}
2^b
5
1.4
0.9
1.1^{b, c}
0.7^{b, c}
1.4
0.9
1.1^{b, c}
0.7^{b, c}
- 55 to 150
K
Unit
V
A
W
°C
Document Number: 68912
S-82297-Rev. A, 22-Sep-08
www.vishay.com
1