SI3590DV_08 Datasheet, PDF (1/9 Pages) Vishay Siliconix – N- and P-Channel 30-V (D-S) MOSFET

New Product
Si3590DV
Vishay Siliconix
N- and P-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (Ω)
N-Channel
30
0.077 at V_GS = 4.5 V
0.120 at V_GS = 2.5 V
P-Channel - 30
0.170 at V_GS = - 4.5 V
0.300 at V_GS = - 2.5 V
I_D (A)
3
2
-2
- 1.2
FEATURES
• TrenchFET^® Power MOSFET
• Ultra Low r_DS(on) N- and P-Channel
for High Efficiency
• Optimized for High-Side/Low-Side
• Minimized Conduction Losses
APPLICATIONS
• Portable Devices Including PDAs, Cellular
Phones and Pagers
Pb-free
Available
RoHS*
COMPLIANT
TSOP-6
Top View
G1
1
6
D1
3 mm S2
2
5
S1
G2
3
4
D2
D₁
G₁
S₂
G₂
2.85 mm
Ordering Information: Si3590DV-T1
Si3590DV-T1-E3 (Lead (Pb)-free)
S₁
N-Channel MOSFET
D₂
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
N-Channel
P-Channel
Unit
10 sec Steady State 10 sec Steady State
Drain-Source Voltage
Gate-Source Voltage
V_DS
30
V_GS
± 12
- 30
V
± 12
Continuous Drain Current (T_J = 150 °C)^a
T_A = 25 °C
T_A = 70 °C
I_D
3
2.3
2.5
-2
- 1.7
2.0
- 1.6
- 1.3
A
Pulsed Drain Current
I_DM
8
-8
Continuous Source Current (Diode Conduction)^a
I_S
1.05
0.75
- 1.05
- 0.75
Maximum Power Dissipation^a
T_A = 25 °C
T_A = 70 °C
P_D
1.15
0.70
0.83
0.53
1.15
0.70
0.83
0.53
W
Operating Junction and Storage Temperature Range
T_J, T_stg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Maximum Junction-to-Ambient^a
Maximum Junction-to-Foot (Drain)
Notes:
a. Surface Mounted on 1" x 1" FR4 Board.
t ≤ 10 sec
Steady State
Steady State
R_thJA
R_thJF
* Pb containing terminations are not RoHS compliant, exemptions may apply.
Document Number: 72032
S-60422-Rev. B, 20-Mar-06
N-Channel
Typ
Max
93
110
130
150
75
90
P-Channel
Typ
Max
93
110
130
150
75
90
Unit
°C/W
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