SI3590DV Datasheet, PDF (1/8 Pages) Vishay Siliconix – N- and P-Channel 30-V (D-S) MOSFET

New Product
Si3590DV
Vishay Siliconix
N- and P-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (W)
N-Channel
30
P-Channel
-30
0.077 @ V_GS = 4.5 V
0.120 @ V_GS = 2.5 V
0.170 @ V_GS = -4.5 V
0.300 @ V_GS = -2.5 V
TSOP-6
Top View
G1
1
6
D1
3 mm S2
2
5
S1
G2
3
4
D2
2.85 mm
I_D (A)
3
2
-2
-1.2
FEATURES
D TrenchFETr Power MOSFET
D Ultra Low r_DS(on) N- and P-Channel for High
Efficiency
D Optimized for High-Side/Low-Side
D Minimized Conduction Losses
APPLICATIONS
D Portable Devices Including PDAs, Cellular
Phones and Pagers
D₁
S₂
G₂
G₁
S₁
N-Channel MOSFET
D₂
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
N-Channel
P-Channel
Parameter
Symbol 10 secs Steady State 10 secs Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150_C)^a
Pulsed Drain Current
T_A = 25_C
T_A = 70_C
Continuous Source Current (Diode Conduction)^a
Maximum Power Dissipation^a
T_A = 25_C
T_A = 70_C
Operating Junction and Storage Temperature Range
V_DS
V_GS
I_D
I_DM
I_S
P_D
T_J, T_stg
30
-30
"12
"12
3
2.5
-2
-1.7
2.3
2.0
-1.6
-1.3
8
-8
1.05
0.75
-1.05
-0.75
1.15
0.83
1.15
0.83
0.70
0.53
0.70
0.53
-55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Foot (Drain)
t v 10 sec
Steady State
Steady State
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 72032
S-21979—Rev. A, 04-Nov-02
Symbol
R_thJA
R_thJF
N-Channel
Typ
Max
93
110
130
150
75
90
P-Channel
Typ
Max
93
110
130
150
75
90
Unit
_C/W
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