SI3588DV_09 Datasheet, PDF (1/12 Pages) Vishay Siliconix – N- and P-Channel 20-V (D-S) MOSFET

Si3588DV
Vishay Siliconix
N- and P-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
N-Channel
P-Channel
V_DS (V)
20
- 20
R_DS(on) (Ω)
0.080 at V_GS = 4.5 V
0.100 at V_GS = 2.5 V
0.128 at V_GS = 1.8 V
0.145 at V_GS = - 4.5 V
0.200 at V_GS = - 2.5 V
0.300 at V_GS = - 1.8 V
I_D (A)
3.0
2.6
2.3
- 2.2
- 1.8
- 1.5
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET^® Power MOSFETs: 1.8 V Rated
• Compliant to RoHS Directive 2002/95/EC
TSOP-6
Top View
G1
1
6
D1
3 mm S2
2
5
S1
G2
3
4
D2
D₁
S₂
G₂
G₁
2.85 mm
Ordering Information: Si3588DV-T1-E3 (Lead (Pb)-free)
Si3588DV-T1-GE3 (Lead (Pb)-free and Halogen-free)
S₁
N-Channel MOSFET
D₂
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
N-Channel
P-Channel
Parameter
Symbol
5 s Steady State 5 s Steady State ^Unit
Drain-Source Voltage
Gate-Source Voltage
V_DS
20
- 20
V
V_GS
±8
Continuous Drain Current (T_J = 150 °C)^a
T_A = 25 °C
T_A = 70 °C
I_D
3.0
2.3
Pulsed Drain Current
I_DM
2.5
- 2.2
- 0.57
2.0
- 1.8
- 1.5
A
±8
Continuous Source Current (Diode Conduction)^a
I_S
1.05
0.75
- 1.05
- 0.75
Maximum Power Dissipation^a
T_A = 25 °C
T_A = 70 °C
P_D
1.15
0.73
0.83
0.53
1.15
0.083
W
0.73
0.53
Operating Junction and Storage Temperature Range
T_J, T_stg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
t≤5s
Steady State
Maximum Junction-to-Foot (Drain)
Steady State
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
Symbol
R_thJA
R_thJF
Typical
93
130
90
Maximum
110
150
90
Unit
°C/W
Document Number: 71332
S09-2275-Rev. B, 02-Nov-09
www.vishay.com
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