SI3588DV Datasheet, PDF (1/7 Pages) Vishay Siliconix – N- and P-Channel 20-V (D-S) MOSFET

New Product
Si3588DV
Vishay Siliconix
N- and P-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
V_DS (V)
N-Channel
20
P-Channel
–20
G1
3 mm S2
G2
TSOP-6
Top View
1
6
2
5
3
4
2.85 mm
r_DS(on) (W)
0.080 @ V_GS = 4.5 V
0.100 @ V_GS = 2.5 V
0.128 @ V_GS = 1.8 V
0.145 @ V_GS = –4.5 V
0.200 @ V_GS = –2.5 V
0.300 @ V_GS = –1.8 V
I_D (A)
3.0
2.6
2.3
–2.2
–1.8
–1.5
D₁
D1
S1
G₁
D2
S₁
N-Channel MOSFET
S₂
G₂
D₂
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
N-Channel
P-Channel
Parameter
Symbol 5 secs Steady State 5 secs Steady State Unit
Drain-Source Voltage
Gate-Source Voltage
V_DS
20
–20
V
V_GS
"8
T_A = 25_C
3.0
Continuous Drain Current (T_J = 150_C)^a
T_A = 70_C
I_D
2.3
Pulsed Drain Current
I_DM
2.5
–2.2
2.0
–1.8
"8
–0.57
–1.5
A
Continuous Source Current (Diode Conduction)^a
I_S
1.05
0.75
–1.05
–0.75
Maximum Power Dissipation^a
T_A = 25_C
T_A = 70_C
P_D
1.15
0.73
0.83
0.53
1.15
0.083
W
0.73
0.53
Operating Junction and Storage Temperature Range
T_J, T_stg
–55 to 150
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71332
S-02383—Rev. A, 23-Oct-00
t v 5 sec
Steady State
Steady State
Symbol
R_thJA
R_thJF
Typical
93
130
90
Maximum
110
150
90
Unit
_C/W
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