SI3552DV_05 Datasheet, PDF (1/8 Pages) Vishay Siliconix – N- and P-Channel 30-V (D-S) MOSFET

Si3552DV
Vishay Siliconix
N- and P-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
V_DS (V)
N-Channel
30
P-Channel
- 30
r_DS(on) (W)
0.105 @ V_GS = 10 V
0.175 @ V_GS = 4.5 V
0.200 @ V_GS = - 10 V
0.360 @ V_GS = - 4.5 V
I_D (A)
2.5
2.0
- 1.8
- 1.2
TSOP-6
Top View
G1
1
6
D1
3 mm S2
2
5
S1
G2
3
4
D2
2.85 mm
Ordering Information: Si3552DV-T1
D₁
G₁
S₁
N-Channel MOSFET
FEATURES
D TrenchFETr Power MOSFET
D 100% R_g Tested
S₂
G₂
D₂
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
N-Channel P-Channel
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150_C)^{a, b}
Pulsed Drain Current
Continuous Source Current (Diode Conduction)^{a, b}
Maximum Power Dissipation^{a, b}
Operating Junction and Storage Temperature Range
T_A = 25_C
T_A = 70_C
T_A = 25_C
T_A = 70_C
V_DS
V_GS
I_D
I_DM
I_S
P_D
T_J, T_stg
30
- 30
"20
"20
2.5
- 1.8
2.0
- 1.2
8
-7
1.05
- 1.05
1.15
0.73
- 55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Lead
Notes
a. Surface Mounted on FR4 Board.
b. t v 5 sec
Document Number: 70971
S-31725—Rev. B, 18-Aug-03
t v 5 sec
Steady State
Steady State
Symbol
R_thJA
R_thJL
Typical
93
130
75
Maximum
110
150
90
Unit
_C/W
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